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Born V, Beck M, Bosholm O, u. a. Extended metallization reliability testing: Combining standard wafer level with product tests to increase test sensitivity. Microelectronics Reliability. 2009;49. doi:https://doi.org/10.1016/j.microrel.2008.10.017.
Born, V. ., Beck, M. ., Bosholm, O. ., Dalleau, D. ., Glenz, S. ., Haverkamp, I. ., … Vest, A. . (2009). Extended metallization reliability testing: Combining standard wafer level with product tests to increase test sensitivity. Microelectronics Reliability, 49. http://doi.org/https://doi.org/10.1016/j.microrel.2008.10.017
Born, V., M. Beck, O. Bosholm, D. Dalleau, S. Glenz, I. Haverkamp, G. Kurz, F. Lange, und Anja Vest. 2009. „Extended Metallization Reliability Testing: Combining Standard Wafer Level With Product Tests to Increase Test Sensitivity“. Microelectronics Reliability 49. doi:https://doi.org/10.1016/j.microrel.2008.10.017.
Born, V. u. a. „Extended Metallization Reliability Testing: Combining Standard Wafer Level With Product Tests to Increase Test Sensitivity“. Microelectronics Reliability 49 (2009): n. pag.
Born, V., u. a. „Extended Metallization Reliability Testing: Combining Standard Wafer Level With Product Tests to Increase Test Sensitivity“. Microelectronics Reliability, Bd. 49, 1, 2009, doi:https://doi.org/10.1016/j.microrel.2008.10.017.
Details
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Volume
49 -
Type of Article
Journal Article -
ISSN Number
0026-2714 -
URL
https://www.sciencedirect.com/science/article/pii/S0026271408004083