Abstract
SiC-JFETs are promising for many future applications but have a normally-on behaviour, which usually necessitates an auxiliary MOSFET to achieve self-blocking capability. However this characteristic is predestinated to current source inverter topologies as an attractive alternative for fast switching applications. The paper presents practical investigations o SiC-JFETs with a modified driver stage in a current source inverter and for comparison in a voltage source inverter topology. Measurement results of both topologies at a frequency of 250 kHz are included. Furthermore differences in the minimising of switching losses for each topology are shown.
Zitieren
1.
Koch I, Hinrichsen F, Canders W-R. Application of SiC-JFETs in current source inverter topologies. In: 2005 European Conference on Power Electronics and Applications. Dresden, Germany; 2005:7 pp.-P.7. doi:10.1109/EPE.2005.219542.
Koch, I., Hinrichsen, F., & Canders, W.-R. (2005). Application of SiC-JFETs in current source inverter topologies. In 2005 European Conference on Power Electronics and Applications (S. 7 pp.-P.7). Dresden, Germany. http://doi.org/10.1109/EPE.2005.219542
Koch, I., Frank Hinrichsen, und W.-R. Canders. 2005. „Application of SiC-JFETs in current source inverter topologies“. In 2005 European Conference on Power Electronics and Applications, 7 pp.-P.7. Dresden, Germany. doi:10.1109/EPE.2005.219542.
Koch, I., Frank Hinrichsen, und W.-R. Canders. „Application of SiC-JFETs in current source inverter topologies“. 2005 European Conference on Power Electronics and Applications. Dresden, Germany: N.p., 2005. 7 pp.-P.7.
Koch, I., u. a. „Application of SiC-JFETs in current source inverter topologies“. 2005 European Conference on Power Electronics and Applications, 2005, S. 7 pp.-P.7.
Details
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Number of Pages
7 pp.-P.7 -
Conference Location
Dresden, Germany -
ISBN Number
90-75815-09-3